Ophthalmic device with thin film anocrystal integrated circuits on ophthalmic devices

ABSTRACT

This invention discloses methods and apparatus to form Thin Film Nanocrystal Integrated Circuit transistors upon Three-dimensionally Formed Insert Pieces. In some embodiments, the present invention includes incorporating the Three-dimensional Surfaces with Thin Film Nanocrystal Integrated Circuit based thin film transistors, electrical interconnects, and energization elements into an Insert Piece for incorporation into Ophthalmic Device. In some embodiments, the Insert Piece may be directly used as a Media Insert or incorporated into an Ophthalmic Device.

FIELD OF USE

This invention describes methods and apparatus operant to form a devicewherein thin film nanocrystal transistors and integrated circuit devicesare defined upon Ophthalmic Device insert components. In someembodiments, the methods and apparatus to form Thin Film NanocrystalIntegrated Circuit devices within Ophthalmic Devices relate to saidformation upon surfaces that occur on substrates that havethree-dimensional shapes. In some embodiments, a field of use for themethods and apparatus may include Ophthalmic Devices, which incorporateenergization elements, inserts and Thin Film Nanocrystal IntegratedCircuit devices.

BACKGROUND

Traditionally, an Ophthalmic Device, such as a contact lens, anintraocular lens, or a punctal plug included a biocompatible device witha corrective, cosmetic, or therapeutic quality. A contact lens, forexample, may provide one or more of vision correcting functionality,cosmetic enhancement, and therapeutic effects. Each function is providedby a physical characteristic of the lens. A design incorporating arefractive quality into a lens may provide a vision corrective function.A pigment incorporated into the lens may provide a cosmetic enhancement.An active agent incorporated into a lens may provide a therapeuticfunctionality. Such physical characteristics are accomplished withoutthe lens entering into an energized state. A punctal plug hastraditionally been a passive device.

More recently, active components have been incorporated into a contactlens. Some components may include semiconductor devices. Some exampleshave shown semiconductor devices embedded in a contact lens placed uponanimal eyes. It has also been described how the active components may beenergized and activated in numerous manners within the lens structureitself. The topology and size of the space defined by the lens structurecreates a novel and challenging environment for the definition ofvarious functionalities. In many embodiments, it is important to providereliable, compact and cost effective means to energize components withinan Ophthalmic Device. In some embodiments, these energization elementsmay include batteries, which may also be formed from “alkaline” cellbased chemistry. Connected to these energization elements may be othercomponents that utilize their electrical energy. In some embodiments,these other components may include transistors to perform circuitfunctions. It may be useful and enabling to include in such devices ThinFilm Nanocrystal Integrated Circuit devices.

SUMMARY

Accordingly, the present invention includes an active Ophthalmic Devicecomprising a first Three-dimensionally Formed Media Insert, wherein thefirst Media Insert comprises a first energization element proximate to afirst conductive trace, wherein the proximity may be capable of placingthe first energization element in electrical communication with a firstthin film transistor comprising a first thin film nanocrystal transistordevice layer; and a hydrogel material, wherein the hydrogel material maybe capable of surrounding or encapsulating the first Media Insert.

In some embodiments, the first conductive trace may comprise atransparent electrode including, for example, indium tin oxide. Thefirst energization element may comprise a plurality of electrochemicalcells, wherein the electrochemical cells may be connected, at least inpart, in a series. The first thin film transistor may comprise an n-typenanocrystal layer, including, for example, Cadmium Selenide (CdSe)nanocrystals. Alternatively, the first thin film transistor may comprisea p-type nanocrystal layer, including, for example, Copper Selenide.

The Media Insert encapsulated in the Ophthalmic Device may furthercomprise a second thin film transistor comprising a second nanocrystallayer, wherein the second thin film transistor may be in electricalcommunication with the first energization element. Similar to the firstthin film transistor, in some embodiments, the second nanocrystal layermay comprise p-type nanocrystal layer, including, for example, CopperSelenide.

In some embodiments, the Ophthalmic Device may further comprise anactive optical device capable of changing the focal characteristics ofthe Ophthalmic Device, wherein the active optical device may be inelectrical communication with the first energization element. Forexample, the active optical device may comprise a liquid meniscus lenselement. In some such embodiments, the Media Insert encapsulated in theOphthalmic Device may further include an activation element inelectrical communication with the active optical device, such as, forexample, a pressure-sensitive switch.

The present invention also includes second Media Insert comprising asecond energization element; a second conductive trace; and a third thinfilm transistor comprising an organic semiconductor layer, wherein thesecond conductive trace is capable of placing the second energizationelement in electrical communication with the third film transistor. Thethird film transistor may comprise the n-type nanocrystal layer,including, for example Cadmium Selenide nanocrystals. The second MediaInsert may further comprise a fourth thin film transistor layer, whereinthe fourth thin film transistor layer comprises the p-type organicsemiconductor layer, such as, for example, pentacene.

DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an exemplary Insert Piece with Three-dimensionalSurfaces upon which Thin Film Nanocrystal Integrated Circuit devices maybe defined consistent with other related disclosures of the inventiveentity.

FIG. 2 illustrates an exemplary flow for forming Three-dimensionalSurfaces that may be consistent with the formation of Thin FilmNanocrystal Integrated Circuit devices.

FIG. 3 illustrates an integrated circuit device connected to aThree-dimensionally Formed Insert Piece with conductive traces in atleast two electrically conductive locations.

FIG. 4 illustrates an exemplary set of processing flow steps for theformation of complementary n and p-type Thin Film Nanocrystal IntegratedCircuit devices, which may be useful for the inclusion into OphthalmicDevices.

FIG. 5 illustrates an exemplary electronic circuit function utilizingThin Film Nanocrystal Integrated Circuits that may be included in anOphthalmic Device.

FIG. 6 illustrates a representation of an Insert Piece comprising thecircuit elements of

DETAILED DESCRIPTION OF THE INVENTION

The present invention relates to Ophthalmic Devices including Thin FilmNanocrystal Integrated Circuit devices. In some embodiments the ThinFilm Nanocrystal Integrated Circuit devices are attached to one or moreMedia Inserts. In some embodiments, the Media Insert structure may havesurfaces that have three-dimensional topology.

Some embodiments may also include thin film nanocrystal transistors andintegrated circuits consistent with flexible substrates. Some specificdevices include cadmium selenide as short chain inorganic based ligands,such as thiocyanate materials. Nanocrystals may be coordinated intouseable and conductive layers.

In the following sections detailed descriptions of embodiments of theinvention will be given. The description of both preferred andalternative embodiments are exemplary embodiments only, and it isunderstood that to those skilled in the art that variations,modifications and alterations may be apparent. It is therefore to beunderstood that said exemplary embodiments do not limit the scope of theunderlying invention.

GLOSSARY

In this description and claims directed to the presented invention,various terms may be used for which the following definitions willapply:

Anode: as used herein refers to an Electrode through which electriccurrent flows into a polarized electrical device. The direction ofelectric current that is typically opposite to the direction of electronflow. In other words, the electrons flow from the Anode into, forexample, an electrical circuit.

Cathode: as used herein refers to an Electrode through which electriccurrent flows out of a polarized electrical device. The direction ofelectric current that is typically opposite to the direction of electronflow. Therefore, the electrons flow into the polarized electrical deviceand out of, for example, the connected electrical circuit.

Electrode: as used herein can refer to an active mass in the EnergySource. For example, it may include one or both of the Anode andCathode.

Encapsulate: as used herein refers to creating a barrier to separate anentity, such as, for example, a Media Insert, from an environmentadjacent to the entity.

Encapsulant: as used herein refers to a layer formed surrounding anentity, such as, for example, a Media Insert, that creates a barrier toseparate the entity from an environment adjacent to the entity. Forexample, Encapsulants may be comprised of silicone hydrogels, such asEtafilcon, Galyfilcon, Narafilcon, and Senofilcon, or other hydrogelcontact lens material. In some embodiments, an Encapsulant may besemipermeable to contain specified substances within the entity andpreventing specified substances, such as, for example, water, fromentering the entity.

Energized: as used herein refers to the state of being able to supplyelectrical current to or to have electrical energy stored within.

Energy: as used herein refers to the capacity of a physical system to dowork. Many uses within this invention may relate to the said capacitybeing able to perform electrical actions in doing work.

Energy Source: as used herein refers to device or layer which is capableof supplying Energy or placing a logical or electrical device in anEnergized state.

Energy Harvesters: as used herein refers to device capable of extractingenergy from the environment and convert it to electrical energy.

Functionalized: as used herein refers to making a layer or device ableto perform a function including for example, energization, activation,or control.

Insert Piece: as used herein refers to a solid element of a multi-pieceRigid Insert or Media Insert that may be assembled into the Rigid Insertor Media Insert. In an Ophthalmic Device, an Insert Piece may containand include a region in the center of an Ophthalmic Device through whichlight may proceed into the user's eye. This region may be called anOptic Zone. In other embodiments, the piece may take an annular shapewhere it does not contain or include some or all of the regions in anOptical Zone. In some embodiments, a Rigid Insert or Media Insert maycomprise multiple Inserts Pieces, wherein some Insert Pieces may includethe Optic Zone and other Insert Pieces may be annular or portions of anannulus.

Lens forming mixture or Reactive Mixture or Reactive Monomer Mixture(RMM): as used herein refers to a monomer or prepolymer material, whichmay be cured and crosslinked or crosslinked to form an Ophthalmic Lens.Various embodiments may include lens-forming mixtures with one or moreadditives such as: UV blockers, tints, photoinitiators or catalysts, andother additives one might desire in an Ophthalmic Lenses such as,contact or intraocular lenses.

Lens Forming Surface: refers to a surface that is used to mold a lens.In some embodiments, any such surface 103-104 can have an opticalquality surface finish, which indicates that it is sufficiently smoothand formed so that a lens surface fashioned by the polymerization of alens forming material in contact with the molding surface is opticallyacceptable. Further, in some embodiments, the lens forming surface103-104 can have a geometry that is necessary to impart to the lenssurface the desired optical characteristics, including withoutlimitation, spherical, aspherical and cylinder power, wave frontaberration correction, corneal topography correction and the like aswell as any combinations thereof.

Lithium Ion Cell: refers to an electrochemical cell where Lithium ionsmove through the cell to generate electrical energy. Thiselectrochemical cell, typically called a battery, may be reenergized orrecharged in its typical forms.

Substrate insert: as used herein refers to a formable or rigid substratecapable of supporting an Energy Source within an Ophthalmic Lens. Insome embodiments, the Substrate insert also supports one or morecomponents.

Media Insert: as used herein refers to an encapsulated insert that willbe included in an energized Ophthalmic Device. The energization elementsand circuitry may be embedded in the Media Insert. The Media Insertdefines the primary purpose of the energized Ophthalmic Device. Forexample, in embodiments where the energized Ophthalmic Device allows theuser to adjust the optic power, the Media Insert may includeenergization elements that control a liquid meniscus portion in theOptical Zone. Alternatively, a Media Insert may be annular so that theOptical Zone is void of material. In such embodiments, the energizedfunction of the Lens may not be optic quality but may be, for example,monitoring glucose or administering medicine.

Mold: refers to a rigid or semi-rigid object that may be used to formlenses from uncured formulations. Some preferred molds include two moldparts forming a front curve mold part and a back curve mold part.

Ophthalmic Lens or Ophthalmic Device or Lens: as used herein refers toany device that resides in or on the eye. The device may provide opticalcorrection, may be cosmetic, or provide some functionality unrelated tooptic quality. For example, the term Lens may refer to a contact Lens,intraocular Lens, overlay Lens, ocular insert, optical insert, or othersimilar device through which vision is corrected or modified, or throughwhich eye physiology is cosmetically enhanced (e.g. iris color) withoutimpeding vision. Alternatively, Lens may refer to a device that may beplaced on the eye with a function other than vision correction, such as,for example, monitoring of a constituent of tear fluid or means ofadministering an active agent. In some embodiments, the preferred Lensesof the invention may be soft contact Lenses that are made from siliconeelastomers or hydrogels, which may include, for example, siliconehydrogels and fluorohydrogels.

Optic Zone: as used herein refers to an area of an Ophthalmic Lensthrough which a wearer of the Ophthalmic Lens sees.

Power: as used herein refers to work done or energy transferred per unitof time.

Precure: as used herein refers to a process that partially cures amixture, such as a Reactive Monomer Mixture. In some embodiments, aprecuring process may comprise a shortened period of the full curingprocess. Alternatively, the precuring process may comprise a uniqueprocess, for example, by exposing the mixture to different temperaturesand wavelengths of light than may be used to fully cure the material.

Predose: as used herein refers to the initial deposition of material ina quantity that is less than the full amount that may be necessary forthe completion of the process. For example, a predose may include aquarter of the necessary substance, such as, for example, a ReactiveMonomer Mixture.

Postdose: as used herein refers to a deposition of material in theremaining quantity after the predose that may be necessary for thecompletion of the process. For example, where the predose includes aquarter of the necessary substance, a subsequent postdose may providethe remaining three quarters of the substance, such as, for example, aReactive Monomer Mixture.

Rechargeable or Re-energizable: as used herein refers to a capability ofbeing restored to a state with higher capacity to do work. Many useswithin this invention may relate to the capability of being restoredwith the ability to flow electrical current at a certain rate for aspecified, reestablished time period.

Reenergize or Recharge: To restore to a state with higher capacity to dowork. Many uses within this invention may relate to restoring a deviceto the capability to flow electrical current at a certain rate for aspecified, reestablished time period.

Released from a mold: means that a lens is either completely separatedfrom the mold, or is only loosely attached so that it may be removedwith mild agitation or pushed off with a swab.

Stacked: as used herein means to place at least two component layers inproximity to each other such that at least a portion of one surface ofone of the layers contacts a first surface of a second layer. In someembodiments, a film, whether for adhesion or other functions may residebetween the two layers that are in contact with each other through saidfilm.

Stacked Integrated Component Devices or SIC Devices: as used hereinrefers to the product of packaging technologies that assemble thinlayers of substrates, which may contain electrical and electromechanicaldevices, into operative integrated devices by means of stacking at leasta portion of each layer upon each other. The layers may comprisecomponent devices of various types, materials, shapes, and sizes.Furthermore, the layers may be made of various device productiontechnologies to fit and assume various contours.

Thin Film Nanocrystal Integrated Circuit: as used herein refers to asemiconductor that is made from carbon-based materials.

Three-dimensional Surface or Three-dimensional Substrate orThree-dimensionally Formed: as used herein refers to any surface orsubstrate that has been Three-dimensionally Formed where the topographyis designed for a specific purpose, in contrast to a planar surface.

Trace: as used herein refers to a battery component capable ofelectrically connecting the circuit components. For example, circuitTraces may include copper or gold when the substrate is a printedcircuit board and may be copper, gold, or printed Deposit in a flexcircuit. Traces may also be comprised of nonmetallic materials,chemicals, or mixtures thereof.

Three-Dimensionally Formed Media Inserts with Incorporated EnergizationDevices for Inclusion of Thin Film Nanocrystal Integrated CircuitDevices.

The methods and apparatus related to the inventive art herein relate toforming Thin Film Nanocrystal Integrated Circuit devices within or onThree-dimensionally Formed substrates where the substrates also includeelectrical interconnects upon its surfaces. Proceeding to FIG. 1, anexemplary Three-dimensional Substrate 100 with electrical traces 130-180is illustrated. In some embodiments, a Three-dimensional Substrate 100may comprise a portion of an Insert Piece for an Ophthalmic Device. Someembodiments may include an Ophthalmic Device that incorporates an activefocusing element. Such an active focusing device may function whileutilizing energy that may be stored in an energization element. Thetraces 130-180 upon the Three-dimensional Substrate 100 may provide asubstrate foundation for formation of energization elements. DiscreteThin Film Nanocrystal Integrated Circuit devices or circuits formed fromThin Film Nanocrystal Integrated Circuit devices may be connected tosaid traces 130-180 through various processes.

In Ophthalmic Device embodiments, the Three-dimensional Substrate mayinclude an optically active region 110. For example, where the device isa focusing element, the region 110 may represent a front surface of anInsert Piece that contains the focusing element through which lightpasses on its way into a user's eye. Outside of this region 110, theremay be a peripheral region of the Insert Piece that is not in anoptically relevant path. In some embodiments, components related to theactive focusing function may be placed in such peripheral region. Insome embodiments, especially those utilizing very thin films andtransparent electrodes, the components may be placed in this opticallyactive region. For example, transparent electrodes may comprise indiumtin oxide (ITO). The various components may be electrically connected toeach other by metal traces, and some of these components may contain ormay be Thin Film Nanocrystal Integrated Circuit devices. These metaltraces may also provide a support function to the incorporation ofenergizing elements into the Ophthalmic Device.

In some embodiments, the energization element may be a battery. Forexample, the battery may be a solid-state battery or alternatively itmay be a wet cell battery. In such embodiments, there may be a minimumof at least two traces that are electrically conductive to provide anelectrical potential formed between the anode 150 of the battery and acathode 160 of the battery to be provided to other active elements inthe device for their energization. The anode 150 connection mayrepresent the (−) potential connection of an energization element toincorporated devices. The cathode 160 connection may represent the (+)potential connection of an energization element to incorporated devices.

In some embodiments, Thin Film Nanocrystal Integrated Circuit elementsmay be connected through the anode 150 and cathode 160 connectionpoints. In other embodiments, the Thin Film Nanocrystal IntegratedCircuit devices may be formed directly upon the substrate 100 surfaceand may be connected with anode 150 and cathode 160 points or,alternatively, may be integrally connected by using the same metallurgyfor interconnections within the circuit devices themselves.

The anode 150 and cathode 160 traces may be connected to isolated traces140 and 170 respectively. These isolated traces 140 and 170 may lieclose to neighboring traces 130 and 180. The neighboring traces 130 and180 may represent the opposite battery chemistry or electrode type whenbattery elements are produced upon these traces 130 and 180. Thus,neighboring traces 130 and 180 may be connected to a chemical layer thatmay make it function as a cathode of a battery cell between traces 130and 140.

The two neighboring traces 130 and 180 may connect to each other througha trace region 120. This region 120, in some embodiments, may not becovered by chemical layers, allowing the region to function as anelectrical interconnection. In some exemplary embodiments, two pairs ofelectrical cells may be configured as batteries, and the nature of thelayout and design may connect these two batteries in a seriesconnection. The total electrical performance across connections 150 and160 may be considered a combination of two battery cells. In embodimentsthat incorporate Thin Film Nanocrystal Integrated Circuit devices, theenergization voltage requirements may be in the tens of volts.Accordingly, multiple regions 120 may be formed to allow theenergization elements to define a higher total energization voltage.

Proceeding to FIG. 2, an exemplary progression 200 for the formation ofa Three-dimensional Substrate with conductive traces is illustrated. Insome embodiments, a set of conductive features, which may afterprocessing become interconnects on a Three-dimensional Surface, may beformed while base materials are kept in a planar shape. At 210, a basesubstrate may be formed. In ophthalmic embodiments, the substrate may beconsistent with forming a part of an Ophthalmic Device. For example, thesubstrate may include Polyimide. In embodiments where the base substrateis formed from a conductive material, the surface may be coated with aninsulator material, which may allow formation of interconnects on itssurface. In some embodiments, where the substrate is comprised ofpolyimide, the substrate may be coated with an insulting layer, forexample of aluminum oxide, which may provide the function ofpreshrinking the substrate before the thin film transistors aredeposited or formed.

In some embodiments, the Thin Film Nanocrystal Integrated Circuit may beprocessed on the substrate obtained at 210. In some such embodiments,the nanocrystal processing steps, for example, as illustrated in FIG. 4,may have occurred prior to the substrate processing steps, asillustrated in FIG. 2. Accordingly, the substrate formed at 210 mayinclude Thin Film Nanocrystal Integrated Circuit devices upon itssurface. In other embodiments, the Thin Film Nanocrystal IntegratedCircuit devices may be formed separately and may be connected to theconductive traces after the substrate has been processed at 260.

At 220, a conductive film may be applied to the substrate base. Theconductive film may include, for example, an aluminum film. In someembodiments, the conductive film may be deformed where the flatsubstrate base may be Three-dimensionally Formed, and the conductivefilm may comprise a malleable conductive material of sufficientthickness to avoid mechanical failure during the three-dimensionalforming processes.

At 230, the conductive film may be patterned into a shape that may forma predefined shape after the flat substrate is Three-dimensionallyFormed. The shapes formed at 230 are for illustrative purposes only andother formations may be apparent. The conductive film, such as, forexample, aluminum film, may be patterned through a variety of methods,for example, through photolithography with chemical etching or laserablation. Alternatively, the imaged conductor patterns may have beendeposited through a screen directly into the patterned shape. Inembodiments where the Thin Film Nanocrystal Integrated Circuit devicesare included on the substrate, the patterned shape formed at 230 mayconnect to the Thin Film Nanocrystal Integrated Circuit.

At 240, in some embodiments, the stacked layer comprising the basesubstrate with overlaid conductive features may be encapsulated in anoverlaid material. In some embodiments, the overlaid material maycomprise a thermoformable material, such as, for example, polyethyleneterephtalate glycol (PETG). In some embodiments, or more specifically,where the stacked layer may be thermoformed, the encapsulation at 240 ofthe formed features may provide stability during thermoforming processesto create Three-dimensional Shapes. In some embodiments, a first planarthermoforming process may occur at 240 to seal the stacked layer, whichmay adhere the overlaid insulating material to the underlying substratebase and defined features in the conductive film. In some embodiments, acomposite film may adversely affect the central optic region, and thecentral optic zone region of the stacked layer may be removed.

At 250, the stacked layer comprising the base material, formedconductive features, and overlaid encapsulating and insulating layer maybe subjected to a thermoforming process, wherein the stacked layer maybe Three-dimensionally Formed. In some embodiments, at 260, where thestacked layer is coated with an insulating layer, vias may be formed at260 into the insulating material. At 260, the electrical conductive viasand openings may be included at appropriate locations, wherein the viasmay allow the Thin Film Nanocrystal Integrated Circuit to connect withthe encapsulated conductive features included on the stacked layer. Thevias and openings may be formed through a variety of processes,including, for example, laser ablation, which may precisely createopenings by ablating the top insulator layer of the stacked layer,thereby exposing an underlying conductive film area.

Electrically Connecting Thin Film Nanocrystal Integrated Circuit DevicesUpon Three-Dimensionally Formed or Formable Insert Substrates

Proceeding to FIG. 3, an exemplary embodiment of a Thin Film NanocrystalIntegrated Circuit 305 included on a Three-dimensionally Formed stackedlayer comprising a substrate 300 with conductive traces 325 isillustrated. In some such embodiments, the Thin Film NanocrystalIntegrated Circuit 305 may be attached after the conductive traces 325have been included on the substrate 300. Alternatively, the Thin FilmNanocrystal Integrated Circuit 305 may be included on the substrate 300prior to placement of the conductive traces 325.

The components of the Thin Film Nanocrystal Integrated Circuit 305 maybe electrically connected to the conductive traces 325 throughinterconnection features 310, 320 included on the substrate 300. Theelectrical connection at the interconnection features 310, 320 mayconnect the Thin Film Nanocrystal Integrated Circuit 305 to the electriccomponents on the substrate 300 that may be critical for the functionaloperation of the Media Insert. Such electric components may include, forexample, the energization elements, sensors, active optical elements,other integrated circuit designs, medicament pumps, and medicamentdispersal devices. In some embodiments, including flip-chiporientations, interconnection features 310, 320 may comprise, forexample, flowable solder balls or conductive epoxy. In embodiments wherethe conductive traces 325 and the interconnection features 310, 320 areencapsulated or insulated, vias may be cut out or diced from the stackedlayer, which may allow connection between the components of the ThinFilm Nanocrystal Integrated Circuit 305 and the interconnection features310, 320.

Forming Thin Film Nanocrystal Integrated Circuit Transistors on MediaInsert Surfaces

Thin Film Nanocrystal Integrated Circuit devices may comprise a varietyof structures including, for example, those based on field effectsemiconducting device structures. In some such exemplary embodiments,the devices may include designs that have a gate electrode lying under,above, or at the nanocrystal layers.

Proceeding to FIG. 4, an exemplary embodiment of parallel processingflow 400, 450 that may produce complementary p and n-type Thin FilmNanocrystal Integrated Circuit devices is illustrated. In someembodiments, the n-type process 400 and the p-type process 450 may beperformed in isolation. At 410, the base material for each type ofdevice may be a flat or planar substrate upon which the devices may beformed. In some “bottom gate” electrode-type process embodiments, atstep 415, a metallic or conductive material may be deposited to form anisolated gate electrode. In some embodiments, the gate electrode may bescreened deposited from a sputtered or evaporated source. Other methodsmay include blanket deposition followed by patterned etching processes.

In some embodiments, at 420, a gate dielectric layer may be deposited tocover and surround the gate electrode. An exemplary method for saiddeposition may be to spin on the dielectric from a liquid precursorfollowed by a curing process. In other embodiments, the dielectric maybe deposited by vapor deposition, and in some cases subsequentlyplanarized by a technique such as, for example, chemical mechanicalpolishing. In other embodiments, a seed film of aluminum oxide may begrown in select regions by features, for example those comprising gold,which may block the growth except in the selected region. In someembodiments, atomic layer deposition processing may allow the selectivegrowth of a quality dielectric film, such as, for example, an aluminumoxide atomic layer, in specific regions.

In some embodiments of n-type processing at 400, at 425, the n-type ThinFilm Nanocrystal Integrated Circuit layer may be deposited upon thedielectric layer. This deposition may be regionally controlled by maskeddeposition of sprayed forms of the Thin Film Nanocrystal IntegratedCircuit. In other embodiments, a blanket film may be applied followed bya patterned removal process. An exemplary material for the n-type layermay include, for example, CdSe nanocrystals, which may be interboundthrough ligands, such as thiocyanate. In some embodiments, the exemplarylayer may be doped by indium. In some embodiments of ambipolar devices,the n-type Thin Film Nanocrystal Integrated Circuit film may bedeposited on the dielectric layer at 425, and the n-type layer may becovered by p-type Thin Film Nanocrystal Integrated Circuit material at430. In other embodiments, as illustrated, p-type processing 450 may notinclude a deposition of an n-type layer at 425.

In some p-type embodiments, at step 430, a p-type Thin Film NanocrystalIntegrated Circuit layer may be deposited upon the dielectric layer.This deposition may be regionally controlled by masked deposition ofvapor phase forms of the Thin Film Nanocrystal Integrated Circuit. Inother embodiments, a blanket film may be applied followed by a patternedremoval process. In some embodiments, n-type processing 400 may notinclude a deposition of a p-type layer at 430. The p-type layer mayinclude CuSe nanocrystals, for example. Alternatively, the p-type layermay comprise an organic semiconductor layer, which may include, forexample, pentacene, tetracene, rubrene, and regioregularpoly(3-hexylthiophene) (P3HT). It may be apparent to one ordinarilyskilled in the art that other materials may comprise acceptable n andp-type organic TFT devices and nanocrystal TFT devices, which may beconsistent within the scope of the art herein.

At 435 and 436, electrodes 461, 462 may be placed on the formative ThinFilm Nanocrystal Integrated Circuit transistor device. As illustrated,the electrode placement at 435 for the n-type process may be separatefrom the electrode placement at 436 for the p-type process. In someembodiments, the placement of the electrodes 461, 462 at 435, 436 mayoccur simultaneously. There may be numerous means to form thesource/drain electrodes including screened deposition from a sputteredor evaporated source. Other methods may include blanket depositionfollowed by patterned etching processes. Any method of forming isolatedconductive electrode structures may be consistent with the art herein.

In some embodiments, at 440 and 441, insulator may be placed toencapsulate the source/drain electrodes or the entire device. Anexemplary method of deposition may include spinning on the dielectricfrom a liquid precursor followed by a curing process. In otherembodiments, the dielectric may be deposited by vapor deposition, and insome implementations, the dielectric may be planarized by a techniquesuch as chemical mechanical polishing. In some embodiments, followingthe deposition of the insulator layer, contact openings 463 may beformed, such as through laser ablation processing or lithography imagedsubtractive etching processes.

An Example of an Ophthalmic Embodiment Utilizing Thin Film NanocrystalIntegrated Circuit Transistors

Proceeding to FIG. 5, an exemplary electronic circuit 500 consistentwith an of an ophthalmic embodiment where an energization element mayrespond to a mechanical switch as an activation device and may applyelectrical potential when activated across an active Ophthalmic Deviceincluding a meniscus-based focusing element.

An energization element 510 may energize circuits that may contain ThinFilm Nanocrystal Integrated Circuit transistors, and in someembodiments, the energization element 510 may be comprised of variousand numerous battery cells connected in a series manner. As an example,cells may be connected to generate an electrical potential in theenergization element of approximately 20 Volts. Other embodiments mayinclude more or less cells connected together to generate energizationpotentials ranging from approximately 10 Volts to 100 volts.

The energization element 510 may apply its potential across an activeophthalmic element 520. In some embodiments, the active optical element520 may be a meniscus lens based device that may respond by changing theshape of a meniscus based on the application of potential across twoimmiscible fluids. In some embodiments of a meniscus lens based devices,the device may function essentially as an extremely high impedancecapacitor, from an electrical perspective. Therefore, the energizationelement 510 may initially charge the active optical element 520 througha resistive element 570. When the potential fully charges the capacitiveelement, the energization element 510 may not have a large dissipativeload on it. In embodiments with more complex circuitry, start-upcircuitry may be defined to further ensure that the energization element510 may not be discharged.

The electronic circuit 500 may further include a “D-FlipFlop” circuit,based on a circuit using the complementary n and p-type Thin FilmNanocrystal Integrated Circuit transistors. The D-FlipFlop 550 may haveits D and Q (not) outputs connected together, and the Set (s) and Reset(R) may be connected to ground. The output of Q may then flip from onestate to the next when there is a voltage level change at the Clock (CP)input. That input may be set by the energization element 510, through aresistive element 540.

When an external switch 560 may be activated, such as where a userexerts pressure onto a pressure switch, the potential at CP may bebrought close to ground, and this level change may toggle the state ofthe D-FlipFlop 550. When the level changes at Q, a transistor 530connected thereto may be “Turned-On” and may conduct across the activeoptical element 520 effectively shorting the active optical element 520and allowing a change in the active optical state. Numerous designs offlip-flop circuits may function in similar manners as described with aD-FlipFlop circuit 550 with multiple methods of activating andcontrolling the status of the exemplary circuit 500.

Proceeding to FIG. 6, an exemplary embodiment of an Insert Piece thatmay be consistent with the circuit embodiment illustrated in FIG. 5 isillustrated. In some embodiments, a connection point 610 may allow forelectrical communication between the meniscus lens and the circuit. Someembodiments may include multiple energization cells 620 connected inseries in order to generate the necessary potentials required foroperation of Thin Film Nanocrystal Integrated Circuit based circuits. Insome such embodiments, the series of energization cells 620 may definean energization element of approximately 5 volts, for example. Theenergization element may include two contacts 630, 640.

In some embodiments, a D-Type FlipFlop circuit 650 may comprise multiplecircuit components, such as, for example, those illustrated in FIG. 5.The D-Type Flip Flop circuit 650 may contain both n and p-type Thin FilmNanocrystal Integrated Circuit transistors and the resistive elements540 and 570. In some embodiments, a second contact 660 may define analternative connection point for the meniscus lens.

Some embodiments may include a pressure-sensitive switch 670 or membraneswitch that may be formed from spaced metallic traces that may completea contact between the two sides when the switch 670 is deflected bypressure. In some embodiments, the D-Type FlipFlop circuit 650 mayinclude additional circuit elements, which may provide a debouncefunction or a time-delayed debounce function for the action of thedescribed activation device. Other activation devices, such ashall-effect devices, may provide equivalent switching function to thatdescribed.

Specific examples have been described to illustrate aspects of inventiveart relating to the formation, methods of formation, and apparatus offormation that may be useful to form energization elements uponelectrical interconnects on Three-dimensional Surfaces. These examplesare for said illustration and are not intended to limit the scope in anymanner. Accordingly, the description is intended to embrace allembodiments that may be apparent to those skilled in the art.

CONCLUSION

The present invention, as described above and as further defined by theclaims below, provides methods and apparatus to form Thin FilmNanocrystal Integrated Circuit transistors upon Three-dimensionallyFormed Insert Pieces. In some embodiments, the present inventionincludes incorporating the Three-dimensional Surfaces with Thin FilmNanocrystal Integrated Circuit based thin film transistors, electricalinterconnects, and energization elements into an Insert Piece forincorporation into Ophthalmic Device. In some embodiments, the InsertPiece may be directly used as a Media Insert or incorporated into anOphthalmic Device.

1. An Ophthalmic Device with a Media Insert, wherein the Media Insertincludes thin film nanocrystal film, the Ophthalmic Device comprising: afirst Media Insert with a Three-dimensional Shape, wherein the firstMedia Insert comprises a first energization element proximate to a firstconductive trace, wherein the proximity is capable of placing the firstenergization element in electrical communication with a first thin filmtransistor comprising a first thin film nanocrystal transistor devicelayer; and a hydrogel material, wherein the hydrogel material is capableof surrounding or encapsulating the first Media Insert.
 2. TheOphthalmic Device of claim 1, wherein the first Media Insert furthercomprises: an active optical device capable of changing the focalcharacteristics of the Ophthalmic Device, wherein the active opticaldevice is in electrical communication with the first energizationelement.
 3. The Ophthalmic Device of claim 1 wherein: the first thinfilm transistor comprises an n-type nanocrystal layer.
 4. The OphthalmicDevice of claim 1 wherein: the first thin film transistor comprises ap-type nanocrystal layer.
 5. The Ophthalmic Device of claim 1 wherein:the first conductive trace comprises a transparent electrode.
 6. TheOphthalmic Device of claim 1 wherein: the first energization elementcomprises a plurality of electrochemical cells, wherein theelectrochemical cells are in connection at least in part in a series. 7.The Ophthalmic Device of claim 2 wherein: the active optical devicecomprises a liquid meniscus lens element.
 8. The Ophthalmic Device ofclaim 2, wherein the Media Insert further comprises: an activationelement in electrical communication with the active optical device. 9.The Ophthalmic Device of claim 3 wherein: the n-type nanocrystal layercomprises Cadmium Selenide nanocrystals.
 10. The Ophthalmic Device ofclaim 3, wherein the Media Insert further comprises: a second thin filmtransistor comprising a second nanocrystal layer, wherein the secondthin film transistor is in electrical communication with the firstenergization element.
 11. The Ophthalmic Device of claim 4 wherein: thep-type organic nanocrystal layer comprises Copper Selenide.
 12. TheOphthalmic Device of claim 5 wherein: the transparent electrodecomprises indium tin oxide.
 13. The Ophthalmic Device of claim 8wherein: the activation element comprises a pressure sensitive switch.14. The Ophthalmic Device of claim 10 wherein: the second thin filmtransistor comprises the p-type nanocrystal layer.
 15. The OphthalmicDevice of claim 14 wherein: the p-type organic semiconductor layer ofthe second thin film transistor comprises Copper Selenide.
 16. A secondMedia Insert including thin film nanocrystal film comprising: a secondenergization element; a second conductive trace; and a third thin filmtransistor comprising an organic semiconductor layer, wherein the secondconductive trace is capable of placing the second energization elementin electrical communication with the third film transistor.
 17. Thesecond Media Insert of claim 16 wherein: the third thin film transistorcomprises the n-type nanocrystal layer.
 18. The second Media Insert ofclaim 17 wherein: the n-type nanocrystal layer comprises CadmiumSelenide nanocrystals.
 19. The second Media Insert of claim 16additionally comprising: a fourth thin film transistor layer, whereinthe fourth thin film transistor layer comprises the p-type organicsemiconductor layer.
 20. The second Media Insert of claim 19 wherein:the p-type organic semiconductor layer comprises pentacene.